Søren Tornøe

Atomic layer deposition (ALD) of aluminum fluoride (AlFx) using trymethylaluminum and hydrogen fluoride pyridine precursors was carried out and compared between wafer scale (WSALD) and meter scale (MSALD) systems within a temperature range of 30°C to 160°C. Deposition was then performed at 5 cycle intervals to determine MSALD AlFx’s feasibility for deposition on the chemically inert surface of 2D materials like molybdenum disulfide (MoS2).

Atomic layer deposition (ALD) of aluminum fluoride (AlFx) using trymethylaluminum and hydrogen fluoride pyridine (HF) precursors was carried out in a meter scale system (MSALD). Characterization of samples were compared between standard wafer scale (WSALD) and MSALD systems at various deposition temperatures ranging from 30°C to 160°C. Results indicate that the larger chamber size of MSALD significantly affects deposition rate but results in equal quality films as WSALD. Unlike with traditional WSALD, the ALD window was found to be much lower at 75°C. Deposition was then performed on monolayer molybdenum disulfide (MoS2) at this ALD window on Si wafers to test if HF is capable of depositing on the chemically inert surface. Preliminary results indicate that deposition successfully occur within the first 5 ALD cycles denoted by a decrease in MoS2 RAMAN peak spacing. This decrease is expected as the film thickness increases and is indicative of successful deposition of AlFx on the 2D MoS2 via MSALD.